| PART |
Description |
Maker |
| K4H510438B-ZC/LB0 K4H511638B-ZC/LB0 K4H510838B-ZC/ |
512Mb B-die DDR SDRAM Specification 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 20WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:20; Ways, No. of:20 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
CONN MEMORY CARD HDR CF NORMAL 512MB的乙芯片DDR SDRAM内存规格
CN 68PIN (PC CARD) 512MB的乙芯片DDR SDRAM内存规格
COVER, SIDE ENTRY, 56WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:56; Ways, No. of:56 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格
COVER, TOP ENTRY, 90WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:90; Ways, No. of:90 RoHS Compliant: Yes
DIODE ZENER SINGLE 500mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 150mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-523 3K/REEL
DIODE ZENER SINGLE 200mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-323 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| OLS-130SD_SYG-CD-TD OLS-130SR_Y-CD-TD OLS-130SR_G- |
Series 130 - 1206 - Duplex bicolor
|
OSA Opto Light GmbH
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MAX251 MAX251CPD MAX251CSD MAX251EJD MAX251EPD MAX |
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:90; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
5V High-Speed RS-232 Transceivers with 0.1uF Capacitors
5V Powered Isolated RS-232 Drivers/Receivers
From old datasheet system
5V, Isolated, RS-232 Driver Receiver
Hex schmitt-trigger inverters 14-SO 0 to 70
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| ISL58292IN ISL5829EVAL1 ISL5829IN |
Dual 12-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter
Dual 12-bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter
210MHz; 3.6V; 24mA; dual 12-bit, 3.3V, 130/210 MSPS, commLink high speed D/A converter. For quadrature transmit with IF range 0-80MHz, medical/test instrumentation and equipment, wireless communication systems, BWA infrastructure
|
http://
Intersil Corporation
|
| RF1K49154 FN4143 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A 60V 0.130 Ohm Dual N-Channel LittleFET Power MOSFET
From old datasheet system
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| 1206B753K201PTM 1206B753J500PTM 1206B753J250PTM 12 |
CAPACITOR, CERAMIC, MULTILAYER, 200 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
|
Novacap
|
| RF1K49093 FN3969 |
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFETPower MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A 12V 0.130 Ohm Logic Level Dual P-Channel LittleFET Power MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET
2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RF1K49092 |
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET?Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features 3.5A, 12V (N-Channel)
3.5A/2.5A 12V 0.050/0.130 Ohm Logic Level Complementary LittleFET Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 1N5712UBCC |
0.075 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MICROSEMI CORP-LAWRENCE
|
| 89707.5 897 897002 897003 897004 897005 897010 897 |
低Prroffiille MIINII保险
CAN2DDF-100PF0
Connector,D-Shell,Cable Mnt,PLUG,100 Contacts,SKT,0.075 Pitch,IDC Terminal,HOLE .087-.098
Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:14-22
Low Prroffiille MIINII Fuses
|
圆形连接
保险
Littelfuse, Inc.
LITTELFUSE[Littelfuse]
|
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